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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJF13009 DESCRIPTION *Collector-Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) *Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A *Switching Time : tf= 0.7s(Max.)@ IC= 8.0A APPLICATIONS *Designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current Base Current-Peak Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range VALUE 700 400 9 12 24 6 12 50 150 -65~150 UNIT V V V A A A A W IBM PC Ti Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 2.5 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICEV IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 10mA; IB= 0 IC= 5A ;IB= 1A IC= 8A ;IB= 1.6A IC= 12A ;IB= 3A IC= 5A ;IB= 1A IC= 8A ;IB= 1.6A VCEV= 700V; VBE(off)= 1.5V TC= 100 VEB= 9V; IC= 0 IC= 5A; VCE= 5V IC= 8A; VCE= 5V IC= 0.5 A; VCE= 10V; IE= 0; VCB= 10V; ftest = 0.1MHz 8 6 4 MIN 400 MJF13009 TYP. MAX UNIT V 1.0 1.5 3.0 1.2 1.6 1 5 1 40 30 V V V V V mA mA MHz 180 pF Switching Times; Resistive Load ton ts tf Storage Time Storage Time Fall Time IC= 8A; VCC= 125V; IB1= IB2= 1.6A; tp= 25s; Duty Cycle 1% 1.1 3.0 0.7 s s s isc Websitewww.iscsemi.cn |
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